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Semiconductor Fab: Handling Gallium Arsenide Precursors
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Semiconductor Fab: Handling Gallium Arsenide Precursors

2025-05-25

Latest company case about Semiconductor Fab: Handling Gallium Arsenide Precursors

A chip fabrication facility uses gallium arsenide (UN3399), a water-reactive compound, for epitaxial growth in LED production.
Implementation:

·         The tank’s S30408 stainless steel shell resists corrosion from aggressive organometallic vapors.

·         Maintained at 20°C in a climate-controlled truck to prevent thermal degradation.

·         Vent capacity (0.788 Nm³/s) safely disperses minor gas buildup during warehouse storage.
Outcome: Ensures purity and safety for high-value semiconductor materials, avoiding production delays.